Published August 22, 2011 | Version v1
Journal article

Thermoelectric effects in spin field-effect transistors

Creators

  • 1. College of Science, Nanjing University of Aeronautics and Astronautics, Jiangsu 210016 (China)

Description

We investigate the thermoelectric effects in a spin field-effect transistor with ferromagnetic leads held at different temperatures. The thermopower S and thermoelectric figure of merit ZT oscillate with the increase of the Rashba spin-orbit coupling strength. The oscillation amplitude of ZT decreases with increasing the spin polarization. S and ZT are strongly influenced by the interfacial barrier strength Z, exhibiting a nonmonotonous change with Z. The thermoelectric effects are also manipulated by the magnetization configuration of the ferromagnetic leads. It is expected that the present study of the thermoelectric effects is helpful in the design of thermoelectric devices. -- Highlights: → The thermopower S and thermoelectric figure of merit ZT in an SFET are studied. → S and ZT oscillate with the increase of the Rashba spin-orbit coupling strength. → The oscillation amplitude of ZT decreases with increasing the spin polarization. → S and ZT exhibit a nonmonotonous change with the interfacial barrier strength.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physleta.2011.07.018

Additional details

Identifiers

DOI
10.1016/j.physleta.2011.07.018;
PII
S0375-9601(11)00862-0;

Publishing Information

Journal Title
Physics Letters. A
Journal Volume
375
Journal Issue
36
Journal Page Range
p. 3218-3222
ISSN
0375-9601
CODEN
PYLAAG

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45056087
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
EQUIPMENT; FIELD EFFECT TRANSISTORS; L-S COUPLING; MAGNETIZATION; OSCILLATIONS; PERFORMANCE; SPIN; SPIN ORIENTATION
Descriptors DEC
ANGULAR MOMENTUM; COUPLING; INTERMEDIATE COUPLING; ORIENTATION; PARTICLE PROPERTIES; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.