Thermoelectric effects in spin field-effect transistors
Creators
- 1. College of Science, Nanjing University of Aeronautics and Astronautics, Jiangsu 210016 (China)
Description
We investigate the thermoelectric effects in a spin field-effect transistor with ferromagnetic leads held at different temperatures. The thermopower S and thermoelectric figure of merit ZT oscillate with the increase of the Rashba spin-orbit coupling strength. The oscillation amplitude of ZT decreases with increasing the spin polarization. S and ZT are strongly influenced by the interfacial barrier strength Z, exhibiting a nonmonotonous change with Z. The thermoelectric effects are also manipulated by the magnetization configuration of the ferromagnetic leads. It is expected that the present study of the thermoelectric effects is helpful in the design of thermoelectric devices. -- Highlights: → The thermopower S and thermoelectric figure of merit ZT in an SFET are studied. → S and ZT oscillate with the increase of the Rashba spin-orbit coupling strength. → The oscillation amplitude of ZT decreases with increasing the spin polarization. → S and ZT exhibit a nonmonotonous change with the interfacial barrier strength.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physleta.2011.07.018Additional details
Identifiers
- DOI
- 10.1016/j.physleta.2011.07.018;
- PII
- S0375-9601(11)00862-0;
Publishing Information
- Journal Title
- Physics Letters. A
- Journal Volume
- 375
- Journal Issue
- 36
- Journal Page Range
- p. 3218-3222
- ISSN
- 0375-9601
- CODEN
- PYLAAG
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45056087
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- EQUIPMENT; FIELD EFFECT TRANSISTORS; L-S COUPLING; MAGNETIZATION; OSCILLATIONS; PERFORMANCE; SPIN; SPIN ORIENTATION
- Descriptors DEC
- ANGULAR MOMENTUM; COUPLING; INTERMEDIATE COUPLING; ORIENTATION; PARTICLE PROPERTIES; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Copyright
- Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.