Published October 1, 2019 | Version v1
Journal article

Pressure-Induced Metallization Accompanied by Elongated S–S Dimer in Charge Transfer Insulator NiS2*

  • 1. Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)
  • 2. Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031 (China)
  • 3. Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601 (China)
  • 4. Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204 (China)

Description

The insulator-metal transition triggered by pressure in charge transfer insulator NiS2 is investigated by combining high-pressure electrical transport, synchrotron x-ray diffraction and Raman spectroscopy measurements up to 40–50 GPa. Upon compression, we show that the metallization firstly appears in the low temperature region at ∼3.2 GPa and then extends to room temperature at ∼8.0 GPa. During the insulator-metal transition, the bond length of S–S dimer extracted from the synchrotron x-ray diffraction increases with pressure, which is supported by the observation of abnormal red-shift of the Raman modes between 3.2 and 7.1 GPa. Considering the decreasing bonding-antibonding splitting due to the expansion of S–S dimer, the charge gap between the S-ppπ* band and the upper Hubbard band of Ni-3d e g state is remarkably decreased. These results consistently indicate that the elongated S–S dimer plays a predominant role in the insulator-metal transition under high pressure, even though the p-d hybridization is enhanced simultaneously, in accordance with a scenario of charge-gap-controlled type. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/36/10/107101

Additional details

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
36
Journal Issue
10
Journal Page Range
[5 p.]
ISSN
0256-307X
CODEN
CPLEEU