Published December 31, 2003 | Version v1
Journal article

Infrared spectroscopy of hydrogen in annealed zinc oxide

Description

Zinc oxide (ZnO) has shown great promise as a wide band gap semiconductor with optical, electronic, and mechanical applications. First-principles investigations by C. G. Van de Walle (Phys. Rev. Lett. 85 (2000) 1012) suggest that hydrogen may act as a shallow donor in ZnO. These same predictions also apply to deuterium (D). Using IR spectroscopy we have observed O-H and O-D stretch modes at 3326.3 and 2470.3 cm-1, respectively, in the same sample at a temperature of 14 K. These frequencies are in good agreement with the theoretical predictions for hydrogen and deuterium in an antibonding configuration. We have also performed preliminary polarization measurements at room temperature showing that the dipole of the O-H complex does not lie parallel to the c-axis of wurtzite ZnO

Additional details

Identifiers

DOI
10.1016/j.physb.2003.09.023;
PII
S0921452603006896;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
340-342
Journal Issue
3-4
Journal Page Range
p. 221-224
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
22. international conference on defects in semiconductors
Dates
28 Jul - 1 Aug 2003
Place
Aarhus (Denmark)

Optional Information

Copyright
Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.