Published February 26, 1997 | Version v1
Journal article Metadata-only

Anti structural defects Tecd in CdTe crystals

Creators

  • 1. Fiziko-Tekhnicheskij Inst. im. A.F.Ioffe RAN, Sankt-Peterburg (Russian Federation)

Description

Method of two-temperature annealing under controlled tellurium vapor pressure was used to investigate crystals under conditions of high-temperature thermodynamic crystal equilibrium with gaseous place at low P due to formation of V in the crystal

Additional details

Additional titles

Original title (Russian)
Антиструктурные дефекты Те

Publishing Information

Journal Title
Pis'ma v Zhurnal Tekhnicheskoj Fiziki
Journal Volume
23
Journal Issue
4
Journal Page Range
p. 30-34
ISSN
0320-0116
CODEN
PZTFDD

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
30029077
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; CADMIUM TELLURIDES; CARRIER DENSITY; CHARGE CARRIERS; CHLORINE ADDITIONS; CRYSTAL STRUCTURE; POINT DEFECTS; TELLURIUM; TEMPERATURE RANGE 1000-4000 K; VAPOR PRESSURE
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; HEAT TREATMENTS; PHYSICAL PROPERTIES; SEMIMETALS; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE; THERMODYNAMIC PROPERTIES

Optional Information

Notes
10 refs.