Published April 1980
| Version v1
Journal article
Current suppression induced by conduction-band discontinuity in Al/sub 0.35/Ga/sub 0.65/As-GaAs N-p heterojunction diodes
Creators
- 1. Department of Electrical Engineering, Columbia University, New York, New York 10027
Description
Curent suppression in Al/sub 0.35/Ga/sub 0.65/As-GaAs N-p heterojunctions is observed experimentally. The data are explained by examining the carrier transport modified by electron accumulation in the interface potential notch resulting from the conduction-band discontinuity. In addition, it is found that the temperature dependent I-V measurements can be used to deduce the magnitude of ΔE/sub C/ at the junction interface
Additional details
Publishing Information
- Journal Title
- J. Appl. Phys.
- Journal Volume
- 51
- Journal Issue
- 4
- Series
- J. Appl. Phys.
- Journal Page Range
- 2261-2263
- ISSN
- 0021-8979
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 11552703
- Subject category
- S42: ENGINEERING;
- Descriptors DEI
- ALUMINIUM ALLOYS; CHARGE CARRIERS; CHARGE TRANSPORT; DATA; ELECTRIC CURRENTS; ELECTRONS; ENERGY LEVELS; GALLIUM ARSENIDES; INTERFACES; JOINTS; PERFORMANCE; PHOTODIODES; SOLAR CELLS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; DIRECT ENERGY CONVERTERS; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; INFORMATION; LEPTONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES