Published September 24, 2008 | Version v1
Journal article Metadata-only

Terahertz-frequency InN/GaN heterostructure-barrier varactor diodes

Creators

  • 1. Semiconductor Physics Institute, A Goshtauto 11, Vilnius 01108 (Lithuania)

Description

Frequency multipliers based on the single-barrier and double-barrier InN/GaN heterostructure varactor diodes are suggested. The DC and large-signal AC vertical electron transport in the InN/GaN diodes are investigated by ensemble Monte Carlo simulations. It is found that InN/GaN heterostructure-barrier varactor diodes are able to operate as efficient frequency multipliers in the frequency range up to 1 THz

Availability note (English)

Available from http://dx.doi.org/10.1088/0953-8984/20/38/384202

Additional details

Identifiers

DOI
10.1088/0953-8984/20/38/384202;
PII
S0953-8984(08)74801-X;

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
20
Journal Issue
38
Journal Page Range
[5 p.]
ISSN
0953-8984
CODEN
JCOMEL

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40035470
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
COMPUTERIZED SIMULATION; ELECTRON TRANSFER; ELECTRONS; FREQUENCY RANGE; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM NITRIDES; MONTE CARLO METHOD; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; THZ RANGE
Descriptors DEC
CALCULATION METHODS; ELEMENTARY PARTICLES; FERMIONS; FREQUENCY RANGE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LEPTONS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SIMULATION