Published January 29, 2001 | Version v1
Journal article

Neutron activation analysis for calibration of phosphorus implantation dose

  • 1. Chemical Science and Technology Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland (United States)

Description

A feasibility study was undertaken to determine if radiochemical neutron activation analysis (RNAA) can be used to certify the retained dose of phosphorus implanted in silicon, with the goal of producing a phosphorus SRM. Six pieces of silicon, implanted with a nominal phosphorus dose of 8.5x1014 atoms·cm-2 were irradiated at a neutron flux of 1.05x1014 cm-2·s-1. The samples were mixed with carrier, dissolved in acid, the phosphorus isolated by chemical separation, and 32P measured using a beta proportional counter. A mean phosphorus concentration of (8.35±0.20)x1014 atoms·cm-2 (uncertainty=1 standard deviation) was determined for the six samples, in agreement with the nominal implanted dose

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
550
Journal Issue
1
Journal Page Range
p. 677-681
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
IEEE international conference on characterization and metrology for ULSI technology
Dates
26-29 Jun 2000
Place
Gaithersburg, MD (United States)

Optional Information

Notes
(c) 2001 American Institute of Physics.