Published June 1999
| Version v1
Journal article
Magnetotransport and charge transfer studies on delta-modulation-doped InxGa1-xAs/AlyGa1-yAs strained single quantum wells
- 1. Kwangwoon Univ., Seoul (Korea, Republic of)
- 2. Kyunghee Univ., Seoul (Korea, Republic of)
- 3. Samsung Advanced Institute of Technology, Suwon (Korea, Republic of)
- 4. Korea Basic Science Center, Taejon (Korea, Republic of)
Description
Shubnikov-de Haas (S-dH) and Van der Pauw Hall-effect measurements on a In0.18Ga0.82As/Al0.25Ga0.75As strained single quantum well grown by molecular beam epitaxy have been performed to investigate the existence of the two-dimensional electron gas (2DEG) in the In0.18Ga0.82As single quantum well. The fast Fourier transform for the S-dH data and the observation of the quantum Hall effect clearly indicate 2DEG occupation of a subband in the In0.18Ga0.82As single quantum well. Electronic subband energy and the corresponding wavefunction in the In0.18Ga0.82As quantum well were calculated by a self-consistent method taking into account exchange-correlation effects together with strain and nonparabolicity effects
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 34
- Journal Issue
- Suppl
- Series
- 21 refs, 4 figs
- Journal Page Range
- p. 439-442
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 34074764
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM COMPOUNDS; CHARGED-PARTICLE TRANSPORT; ELECTRON GAS; GALLIUM ARSENIDES; HALL EFFECT; INDIUM COMPOUNDS; MODULATION; MOLECULAR BEAM EPITAXY; NANOSTRUCTURE; QUANTUM MECHANICS; SHUBNIKOV-DE HAAS EFFECT; VAN DER WAALS FORCES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EPITAXY; GALLIUM COMPOUNDS; MECHANICS; PNICTIDES; RADIATION TRANSPORT