Published July 2009
| Version v1
Journal article
A low power bandgap reference with buffer working in the sub-threshold region for energy harvesting systems
- 1. Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)
Description
We propose a bandgap reference, which works in sub-threshold regions to the reduce power consumption in applications such as those in energy harvesting systems that stimulate the development of power management for low power consumption applications. Measurements shows that the supply current of the proposed bandgap reference is only 6.87 μA, including a voltage buffer consuming 3.6 μA of supply current, when the supply voltage is 5 V. The supply voltage can vary from 3 to 11 V and the line regulation of the proposed bandgap reference output voltage is 0.875 mV/V at room temperature. The temperature coefficiency is 88.9 ppm from 10 to 1000C when the supply voltage is 5 V.
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/30/7/075014Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 30
- Journal Issue
- 7
- Journal Page Range
- [5 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42068526
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- BUFFERS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL
- Descriptors DEC
- CURRENTS