A vapor phase deposition of self-assembled monolayers: Vinyl-terminated films of volatile silanes on silicon oxide substrates
- 1. EaStChem School of Chemistry, University of St Andrews, North Haugh, St Andrews KY16 9ST (United Kingdom)
- 2. MEMSStar Technology, Scottish Microelectronics Centre, West Mains Road, Edinburgh EH9 3JF (United Kingdom)
Description
Vinyl-terminated self-assembled monolayers (SAMs) offer significant flexibility for further chemical modification and can serve as a versatile starting point for a tailoring of surface properties. A vapor phase deposition of such films would offer advantages in cases where the preparation from solution is not an option or not desired, for example in connection with silicon microstructures such as micro-electromechanical systems. We show that SAMs of 9-decenyltrichlorosilane (CH2=CH-(CH2)8-SiCl3), 10-undecenyltrichlorosilane (CH2=CH-(CH2)9-SiCl3), 14-pentadecenyltrichlorosilane (CH2=CH-(CH2)13-SiCl3), decyltrichlorosilane (CH3-(CH2)9-SiCl3), and octadecanetrichlorosilane (CH3-(CH2)17-SiCl3) can be prepared both from solution and from the vapor phase. The resulting layers were compared by static contact angle measurements, ellipsometry, X-ray photoelectron spectroscopy, and atomic force microscopy to determine their surface wettability, the film thickness, the smoothness and homogeneity of the respective films, and their chemical composition and each method gave films of comparable quality. Deposition of functionalized SAMs from the vapor phase is rare. Here we report the parameters for the preparation of well-ordered vinyl-terminated SAMs from the vapor phase. - Highlights: ► Vinyl-terminated self-assembled monolayers (SAMs) were prepared on SiOx substrates. ► Films were comprehensively characterized with surface analytical techniques. ► High quality vinyl-terminated SAMs were obtained from the vapor phase. ► Vapor phase deposition can be applied in connection with microstructures.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2012.07.054Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2012.07.054;
- PII
- S0040-6090(12)00903-0;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 520
- Journal Issue
- 22
- Journal Page Range
- p. 6719-6723
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44103573
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CHEMICAL COMPOSITION; DEPOSITION; ELLIPSOMETRY; FILMS; FLEXIBILITY; LAYERS; MICROSTRUCTURE; MODIFICATIONS; SILANES; SILICON; SILICON CHLORIDES; SILICON OXIDES; SMOOTH MANIFOLDS; SURFACES; VAPORS; WETTABILITY; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CHALCOGENIDES; CHLORIDES; CHLORINE COMPOUNDS; ELECTRON SPECTROSCOPY; ELEMENTS; FLUIDS; GASES; HALIDES; HALOGEN COMPOUNDS; HYDRIDES; HYDROGEN COMPOUNDS; MATHEMATICAL MANIFOLDS; MEASURING METHODS; MECHANICAL PROPERTIES; MICROSCOPY; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; SEMIMETALS; SILICON COMPOUNDS; SILICON HALIDES; SPECTROSCOPY; TENSILE PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.