Published April 2007
| Version v1
Journal article
Electric characteristics of Si3N4 films formed by directly radical nitridation on Si(110) and Si(100) surfaces
- 1. Tohoku Univ., Graduate School of Engineering, Sendai, Miyagi (Japan)
Description
High quality Si3N4 film was formed by the nitridation of Si(110) surface using radical NH. It was found that the gate leakage current through the Si3N4 film is three orders of magnitude smaller than that through the conventional SiO2 film, and the interface states density at midgap for Si3N4/Si interface is less than 5x1010 eV-1 cm-2. High-resolution soft-X-ray-excited Si 2p spectra were measured for the Si3N4 films formed on Si(100), Si(110) and Si(111). It was found that the crystal orientation of the Si substrate affects the amount of intermediate nitridation states of Si at the Si3N4/Si interface. (author)
Additional details
Publishing Information
- Journal Title
- Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications and Review Papers
- Journal Volume
- 46
- Journal Issue
- 4B
- Journal Page Range
- p. 1895-1898
- ISSN
- 0021-4922
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 39009836
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BINDING ENERGY; CHEMICAL SHIFT; ELECTRICAL PROPERTIES; FILMS; INTERFACES; LEAKAGE CURRENT; MOSFET; NITRIDATION; NITROGEN HYDRIDES; RADICALS; SAMPLE PREPARATION; SILICON; SILICON NITRIDES; SILICON OXIDES; SOFT X RADIATION; SPRING-8 STORAGE RING; SUBSTRATES; SURFACE PROPERTIES; SURFACES; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; CURRENTS; ELECTRIC CURRENTS; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; ENERGY; FIELD EFFECT TRANSISTORS; HYDRIDES; HYDROGEN COMPOUNDS; IONIZING RADIATIONS; MOS TRANSISTORS; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; PNICTIDES; RADIATION SOURCES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY; STORAGE RINGS; SYNCHROTRON RADIATION SOURCES; TRANSISTORS; X RADIATION
Optional Information
- Notes
- 19 refs., 9 figs., 1 tab.