Published October 15, 2004 | Version v1
Journal article

Valence state of Ti in conductive nanowires in sapphire

  • 1. Institute of Engineering Innovation, University of Tokyo, 2-11-6, Yayoi, Bunkyo, Tokyo 113-8656 (Japan)
  • 2. Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba, Sendai 980-77 (Japan)
  • 3. Department of Materials Science and Engineering, Kyoto University, Yoshida, Sakyo, Kyoto 606-8501 (Japan)
  • 4. Department of Advanced Materials Science, Graduate School of Frontier Science, University of Tokyo, 2-11-16, Yayoi, Bunkyo, Tokyo 113-8656 (Japan)

Description

In order to reveal the valence state of Ti in conductive nanowires in sapphire, near-edge x-ray-absorption fine structures (NEXAFS) were observed. From experimental and theoretical studies on NEXAFS of reference compounds including rutile, anatase, and Ti2O3, it was found that the valence state of Ti can be identified by regarding the positions of the spectral onset and the shoulder in the main peak of Ti-K NEXAFS. The valence states of Ti doped Al2O3 polycrystalline specimens which were annealed at oxidized and reduced atmospheres were determined to be +4 and +3, respectively. The solubility limit of Ti in Al2O3 polycrystal was found to be between 1000 ppm to 1.0% at the both atmospheres. The spectrum from Ti nanowires in sapphire has a lot of similarities to the reduced specimen, the valence state was therefore concluded to be +3

Additional details

Identifiers

Publishing Information

Journal Title
Physical Review. B, Condensed Matter and Materials Physics
Journal Volume
70
Journal Issue
15
Journal Page Range
p. 153101-153101.4
ISSN
1098-0121

Optional Information

Notes
(c) 2004 The American Physical Society