Published November 1, 2013 | Version v1
Journal article

In-situ electric resistance measurements and annealing effects of graphite exposed to swift heavy ions

  • 1. Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI (United States)
  • 2. National Institute for Materials Physics (NIMP), Bucharest (Romania)
  • 3. GSI Helmholtzzentrum für Schwerionenforschung, Darmstadt (Germany)
  • 4. Technische Universität, Darmstadt (Germany)
  • 5. National Superconducting Cyclotron Lab (NSCL), Michigan State University, East Lansing, MI (United States)

Description

To study the suitability of using graphite as material for high-power targets for rare isotope production at the future Facility for Rare Isotope Beams (FRIB) in the USA and at the Facility for Antiproton and Ion Research (FAIR) in Germany, thin foils of polycrystalline graphite were exposed to 8.6-MeV/u Au ions reaching a maximum fluence of 1 × 1015 ions/cm2. Foil irradiation temperatures of up to 1800 °C were obtained by ohmic heating. In-situ monitoring of the electrical resistance of the graphite foils during and after irradiation provided information on beam-induced radiation damage. The rate of electrical resistance increase as a function of fluence was found to decrease with increasing irradiation temperature, indicating a more efficient annealing of the irradiation-produced defects. This is corroborated by the observation that graphite foils irradiated at temperatures below about 800 °C showed cracks and pronounced deformations, which did not appear on the samples irradiated at higher temperatures

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nimb.2013.04.060

Additional details

Identifiers

DOI
10.1016/j.nimb.2013.04.060;
PII
S0168-583X(13)00585-5;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
314
Journal Page Range
p. 125-129
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
8. international symposium on swift heavy ions in matter
Acronym
SHIM 2012
Dates
24-27 Oct 2012
Place
Kyoto (Japan)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45065523
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; ANTIPROTONS; BEAMS; ELECTRIC CONDUCTIVITY; FOILS; GOLD IONS; GRAPHITE; HEAVY IONS; IRRADIATION; MEV RANGE 01-10; POLYCRYSTALS; RADIATION EFFECTS
Descriptors DEC
ANTIBARYONS; ANTIMATTER; ANTINUCLEI; ANTINUCLEONS; ANTIPARTICLES; BARYONS; CARBON; CHARGED PARTICLES; CRYSTALS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; HADRONS; HEAT TREATMENTS; IONS; MATTER; MEV RANGE; MINERALS; NONMETALS; NUCLEI; NUCLEONS; PHYSICAL PROPERTIES; PROTONS

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.