In-situ electric resistance measurements and annealing effects of graphite exposed to swift heavy ions
Creators
- 1. Facility for Rare Isotope Beams, Michigan State University, East Lansing, MI (United States)
- 2. National Institute for Materials Physics (NIMP), Bucharest (Romania)
- 3. GSI Helmholtzzentrum für Schwerionenforschung, Darmstadt (Germany)
- 4. Technische Universität, Darmstadt (Germany)
- 5. National Superconducting Cyclotron Lab (NSCL), Michigan State University, East Lansing, MI (United States)
Description
To study the suitability of using graphite as material for high-power targets for rare isotope production at the future Facility for Rare Isotope Beams (FRIB) in the USA and at the Facility for Antiproton and Ion Research (FAIR) in Germany, thin foils of polycrystalline graphite were exposed to 8.6-MeV/u Au ions reaching a maximum fluence of 1 × 1015 ions/cm2. Foil irradiation temperatures of up to 1800 °C were obtained by ohmic heating. In-situ monitoring of the electrical resistance of the graphite foils during and after irradiation provided information on beam-induced radiation damage. The rate of electrical resistance increase as a function of fluence was found to decrease with increasing irradiation temperature, indicating a more efficient annealing of the irradiation-produced defects. This is corroborated by the observation that graphite foils irradiated at temperatures below about 800 °C showed cracks and pronounced deformations, which did not appear on the samples irradiated at higher temperatures
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nimb.2013.04.060Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2013.04.060;
- PII
- S0168-583X(13)00585-5;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 314
- Journal Page Range
- p. 125-129
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 8. international symposium on swift heavy ions in matter
- Acronym
- SHIM 2012
- Dates
- 24-27 Oct 2012
- Place
- Kyoto (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45065523
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ANTIPROTONS; BEAMS; ELECTRIC CONDUCTIVITY; FOILS; GOLD IONS; GRAPHITE; HEAVY IONS; IRRADIATION; MEV RANGE 01-10; POLYCRYSTALS; RADIATION EFFECTS
- Descriptors DEC
- ANTIBARYONS; ANTIMATTER; ANTINUCLEI; ANTINUCLEONS; ANTIPARTICLES; BARYONS; CARBON; CHARGED PARTICLES; CRYSTALS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; HADRONS; HEAT TREATMENTS; IONS; MATTER; MEV RANGE; MINERALS; NONMETALS; NUCLEI; NUCLEONS; PHYSICAL PROPERTIES; PROTONS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.