Published December 1989
| Version v1
Journal article
MOS components behaviour under low energy electron irradiation
Description
In the influence of a negative charge deposition on the top oxide, i.e. above the polysilicon gate, of MOS transistor working in the enhancement mode with a P type channel, is examined. The magnitude of the parasitic currents which appear between source and drain is similar to the currents normally available on classical devices. The electrical characteristics of this parasitic devices are discussed, and a model is proposed
Abstract (French)
On examine l'influence d'une charge negative deposee dans l'oxyde superieur, c'est a dire au-dessus de la grille de polysilicium, sur le fonctionnement de transistors MOS a canal P fonctionnant en regime d'enrichissement. L'amplitude des courants parasites ainsi generes entre source et drain est comparable a celle des courants normalement disponibles dans les composants classiques. Les caracteristiques electriques de ce composant parasite sont discutees, et un modele est proposeAdditional details
Additional titles
- Original title (French)
- Effet de l'irradiation electronique basse energie sur les composants MOS
Publishing Information
- Journal Title
- Annales de Physique (Les Ulis), Colloque
- Journal Volume
- 14
- Journal Issue
- 6
- Series
- Ann. Phys. (Les Ulis), Colloq.
- Journal Page Range
- 253-258
Conference
- Title
- Effects on Components and Systems.
- Original Conference Title
- Radiations: Effets sur les Composants et Systemes. Radecs 89
- Acronym
- Radecs 89. Radiations
- Dates
- 11-14 Sep 1989.
- Place
- Montpellier (France).
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 21068470
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRONS; MOS TRANSISTORS; PERFORMANCE TESTING; PHYSICAL RADIATION EFFECTS; RADIATION DOSES
- Descriptors DEC
- ELEMENTARY PARTICLES; FERMIONS; LEPTONS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TESTING; TRANSISTORS