Published July 1, 2010 | Version v1
Journal article

Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy

  • 1. Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain)
  • 2. Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8 (PTM), 28760 Tres Cantos, Madrid (Spain)
  • 3. Departamento de Lenguajes y Sistemas Informaticos, CASEM, Universidad de Cadiz, Campus Rio San Pedro, s/n, 11510 Puerto Real, Cadiz (Spain)

Description

The compositional distribution of InAs quantum dots grown by molecular beam epitaxy on GaAs capped InAs quantum dots has been studied in this work. Upper quantum dots are nucleated preferentially on top of the quantum dots underneath, which have been nucleated by droplet epitaxy. The growth process of these nanostructures, which are usually called as quantum dots molecules, has been explained. In order to understand this growth process, the analysis of the strain has been carried out from a 3D model of the nanostructure built from transmission electron microscopy images sensitive to the composition.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2010.03.024

Additional details

Identifiers

DOI
10.1016/j.apsusc.2010.03.024;
PII
S0169-4332(10)00315-6;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
256
Journal Issue
18
Journal Page Range
p. 5659-5661
ISSN
0169-4332
CODEN
ASUSEE

Conference

Title
International conference on progress in applied surface, interface and thin film science - Solar renewable energy news II
Acronym
SURFINT-SREN II
Dates
15-20 Nov 2009
Place
Florence (Italy)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44018600
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DISTRIBUTION; DROPLETS; GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; ELECTRON MICROSCOPY; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; MICROSCOPY; NANOSTRUCTURES; PARTICLES; PNICTIDES

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.