Published October 1, 2009
| Version v1
Journal article
Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering
Creators
- 1. Department of Physics, University of Hong Kong, Pokfulam Road (Hong Kong)
- 2. Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay (Hong Kong)
- 3. College of Physics and Microelectronic Science, Hunan University, Changsha 410082 (China)
- 4. Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, Postfach 510119, D-01314 Dresden (Germany)
- 5. Institut fuer Strahlenphysik, Forschungszentrum Dresden-Rossendorf, Postfach 510119, D-01314 Dresden (Germany)
Description
As-doped ZnO films were grown by the radio frequency magnetron sputtering method. As the substrate temperature during growth was raised above ∼400 deg. C, the films changed from n type to p type. Hole concentration and mobility of ∼6x1017 cm-3 and ∼6 cm2 V-1 s-1 were achieved. The ZnO films were studied by secondary ion mass spectroscopy, x-ray photoelectron spectroscopy (XPS), low temperature photoluminescence (PL), and positron annihilation spectroscopy (PAS). The results were consistent with the AsZn-2VZn shallow acceptor model proposed by Limpijumnong et al. [Phys. Rev. Lett. 92, 155504 (2004)]. The results of the XPS, PL, PAS, and thermal studies lead us to suggest a comprehensive picture of the As-related shallow acceptor formation.
Additional details
Identifiers
- DOI
- 10.1063/1.3236578;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 106
- Journal Issue
- 7
- Journal Page Range
- p. 073709-073709.6
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41096418
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMINO ACIDS; ANNIHILATION; ARSENIC; CRYSTAL GROWTH; DEPOSITION; DOPED MATERIALS; HOLE MOBILITY; HOLES; ION MICROPROBE ANALYSIS; MASS SPECTRA; MASS SPECTROSCOPY; PHOTOLUMINESCENCE; POSITRONS; RADIOWAVE RADIATION; SEMICONDUCTOR MATERIALS; SPUTTERING; SUBSTRATES; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDES
- Descriptors DEC
- ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; CARBOXYLIC ACIDS; CHALCOGENIDES; CHEMICAL ANALYSIS; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTARY PARTICLES; ELEMENTS; EMISSION; FERMIONS; FILMS; INTERACTIONS; LEPTONS; LUMINESCENCE; MATERIALS; MATTER; MICROANALYSIS; MOBILITY; NONDESTRUCTIVE ANALYSIS; ORGANIC ACIDS; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PARTICLE INTERACTIONS; PHOTOELECTRON SPECTROSCOPY; PHOTON EMISSION; RADIATIONS; SEMIMETALS; SPECTRA; SPECTROSCOPY; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2009 American Institute of Physics