Published July 1983
| Version v1
Journal article
Influence of source composition on the properties of flash-evaporated thin films in the Cu-In-Se system
- 1. Karl-Marx-Universitaet, Leipzig (German Democratic Republic). Sektion Physik
- 2. Karl-Marx-Universitaet, Leipzig (German Democratic Republic). Sektion Chemie
Description
Using CuIn2Se/sub 3.5/ as source material epitaxial layers are obtained on (111)A- and (100)-oriented GaAs substrates by flash evaporation in the substrate temperature range T/sub sub/ = 720-870 K. The composition of the films is between CuInSe2 and CuIn2Se/sub 3.5/. The structural properties of the films are similar to those for CuInSe2 epitaxial layers and refer to a chalcopyrite-like structure. The films are always p-type conducting but different acceptor states are found in dependence on the substrate temperature. (author)
Additional details
Publishing Information
- Journal Title
- Cryst. Res. Technol.
- Journal Volume
- 18
- Journal Issue
- 7
- Series
- Cryst. Res. Technol.
- Journal Page Range
- 895-900
- ISSN
- 0232-1300
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 14805170
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- COPPER SELENIDES; ELECTRICAL PROPERTIES; EPITAXY; EVAPORATION; GALLIUM ARSENIDES; HIGH TEMPERATURE; HOLE MOBILITY; HOLES; INDIUM SELENIDES; LATTICE PARAMETERS; LAYERS; P-TYPE CONDUCTORS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; COPPER COMPOUNDS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; MOBILITY; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; TRANSITION ELEMENT COMPOUNDS