Published August 1996
| Version v1
Journal article
Model of multicomponent film deposition using ion beams of chemically active elements
- 1. Donetskij Gosudarstvennyj Univ., Donetsk (Ukraine)
Description
The model is proposed for the synthesis of carbon film on silicon substrate by using low-energy physical and chemical absorption, cascade and stochastic ion beam mixing, sputtering of the film and substrate. Special emphasis is made on chemical reactions both in a transition film-substrate layer and ion the surface. The influence of chemical reactions on both film and substrate concentration profile is considered. 16 refs., 3 figs
Additional details
Additional titles
- Original title (Russian)
- Модел' осаждения многокомпонентных пленок пучками ионов химических активных элементов
Publishing Information
- Journal Title
- Poverkhnost'. Rentgenovskie, Sinkhrotronnye i Nejtronnye Issledovaniya
- Journal Issue
- no.8
- Journal Page Range
- p. 51-57.
- ISSN
- 1028-0960
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 28049015
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ADSORPTION; CARBON; CHEMICAL REACTIONS; INTERFACES; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; PHYSICAL VAPOR DEPOSITION; SILICON; SUBSTRATES; THIN FILMS
- Descriptors DEC
- DEPOSITION; ELEMENTS; FILMS; NONMETALS; RADIATION EFFECTS; SEMIMETALS; SORPTION; SURFACE COATING