Published December 21, 2013 | Version v1
Journal article Metadata-only

Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory

Creators

  • 1. School of Software and Microelectronics, Peking University, Beijing 100871 (China)
  • 2. Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China)
  • 3. Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan 700, Taiwan (China)
  • 4. Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China)
  • 5. Department of Electronics Engineering and Computer Science, Tung-Fang Design Institute, Kaohsiung, Taiwan (China)
  • 6. Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan (China)
  • 7. Department of Chemistry, National Kaohsiung Normal University, Kaohsiung, Taiwan (China)
  • 8. Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

Description

In this paper, multi-layer Zn:SiO2/SiO2 structure is introduced to reduce the operation power consumption of resistive random access memory (RRAM) device by modifying the filament formation process. And the configuration of multi-layer Zn:SiO2/SiO2 structure is confirmed and demonstrated by auger electron spectrum. Material analysis together with conduction current fitting is applied to qualitatively evaluate the carrier conduction mechanism on both low resistance state and high resistance state. Finally, single layer and multilayer conduction models are proposed, respectively, to clarify the corresponding conduction characteristics of two types of RRAM devices

Additional details

Identifiers

DOI
10.1063/1.4843695;

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
114
Journal Issue
23
Journal Page Range
p. 234501-234501.6
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45087362
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CARRIERS; ELECTRON SPECTRA; FILAMENTS; LAYERS; OPERATION; RANDOMNESS
Descriptors DEC
SPECTRA

Optional Information

Notes
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