Development of an in-line X-ray reflectivity technique for metal film thickness measurement
Creators
- 1. Center for Integrated Electronics and Electronic Manufacturing, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
- 2. SUNY/A University at Albany, Albany, New York 12222 (United States)
- 3. ARDEC, Benet Laboratories, Watervliet, New York 12189 (United States)
Description
Non-destructive measurement of thin film (particularly metal film) thickness less than 10 nm has been a challenging task. In this work, we showed that it is possible to obtain the thickness of ultra-thin tantalum films within seconds using a fixed-angle, energy dispersive X-ray reflectivity technique by a conventional, low-energy X-ray copper or chromium source (20 kV/20 mA/400W) and using Parratt reflectivity modeling. We compared this fixed angle, energy dispersive result with more conventional fixed energy, angular dispersive reflectivity to establish the validity of the method and provide error estimates for fast thickness modeling. This X-ray technique is particularly useful for very thin diffusion barrier measurements in future microelectronics applications
Additional details
Identifiers
- DOI
- 10.1063/1.1354405;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 550
- Journal Issue
- 1
- Journal Page Range
- p. 243-248
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- IEEE international conference on characterization and metrology for ULSI technology
- Dates
- 26-29 Jun 2000
- Place
- Gaithersburg, MD (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35071776
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHROMIUM; COPPER; CRYSTALLOGRAPHY; DIFFUSION BARRIERS; ERRORS; INTEGRATED CIRCUITS; MICROELECTRONICS; NONDESTRUCTIVE TESTING; REFLECTION; REFLECTIVITY; SIMULATION; TANTALUM; THICKNESS; THIN FILMS; X RADIATION; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; DIMENSIONS; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; ELEMENTS; FILMS; IONIZING RADIATIONS; MATERIALS TESTING; METALS; MICROELECTRONIC CIRCUITS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; RADIATIONS; REFRACTORY METALS; SCATTERING; SURFACE PROPERTIES; TESTING; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2001 American Institute of Physics.