Published January 29, 2001 | Version v1
Journal article

Development of an in-line X-ray reflectivity technique for metal film thickness measurement

  • 1. Center for Integrated Electronics and Electronic Manufacturing, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
  • 2. SUNY/A University at Albany, Albany, New York 12222 (United States)
  • 3. ARDEC, Benet Laboratories, Watervliet, New York 12189 (United States)

Description

Non-destructive measurement of thin film (particularly metal film) thickness less than 10 nm has been a challenging task. In this work, we showed that it is possible to obtain the thickness of ultra-thin tantalum films within seconds using a fixed-angle, energy dispersive X-ray reflectivity technique by a conventional, low-energy X-ray copper or chromium source (20 kV/20 mA/400W) and using Parratt reflectivity modeling. We compared this fixed angle, energy dispersive result with more conventional fixed energy, angular dispersive reflectivity to establish the validity of the method and provide error estimates for fast thickness modeling. This X-ray technique is particularly useful for very thin diffusion barrier measurements in future microelectronics applications

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
550
Journal Issue
1
Journal Page Range
p. 243-248
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
IEEE international conference on characterization and metrology for ULSI technology
Dates
26-29 Jun 2000
Place
Gaithersburg, MD (United States)

Optional Information

Notes
(c) 2001 American Institute of Physics.