From thermoelectric bulk to nanomaterials: Current progress for Bi2Te3 and CoSb3
Creators
- 1. Institute of Applied Physics, Eberhard Karls University of Tuebingen (Germany)
- 2. Institute of Nanostructure and Solid State Physics, University of Hamburg (Germany)
- 3. Juelich Centre for Neutron Science JCNS and Peter Gruenberg Institute PGI, JARA-FIT, Forschungszentrum Juelich GmbH (Germany)
- 4. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN (United States)
- 5. Faculte des Sciences, Universite de Liege (Belgium)
- 6. Institute of Physics, Technische Universitaet Chemnitz (Germany)
- 7. Institute of Physics, University of Augsburg (Germany)
- 8. Fraunhofer Institute for Manufacturing Technology and Advanced Materials IFAM, Dresden (Germany)
- 9. Fraunhofer-Institut fuer Werkstoffmechanik IWM, Freiburg (Germany)
Description
Bi2Te3 and CoSb3 based nanomaterials were synthesized and their thermoelectric, structural, and vibrational properties analyzed to assess and reduce ZT-limiting mechanisms. The same preparation and/or characterization methods were applied in the different materials systems. Single-crystalline, ternary p-type Bi15Sb29Te56, and n-type Bi38Te55Se7 nanowires with power factors comparable to nanostructured bulk materials were prepared by potential-pulsed electrochemical deposition in a nanostructured Al2O3 matrix. p-type Sb2Te3, n-type Bi2Te3, and n-type CoSb3 thin films were grown at room temperature using molecular beam epitaxy and were subsequently annealed at elevated temperatures. This yielded polycrystalline, single phase thin films with optimized charge carrier densities. In CoSb3 thin films the speed of sound could be reduced by filling the cage structure with Yb and alloying with Fe yielded p-type material. Bi2(Te0.91Se0.09)3/SiC and (Bi0.26Sb0.74)2Te3/SiC nanocomposites with low thermal conductivities and ZT values larger than 1 were prepared by spark plasma sintering. Nanostructure, texture, chemical composition, as well as electronic and phononic excitations were investigated by X-ray diffraction, nuclear resonance scattering, inelastic neutron scattering, Moessbauer spectroscopy, and transmission electron microscopy. For Bi2Te3 materials, ab-initio calculations together with equilibrium and non-equilibrium molecular dynamics simulations for point defects yielded their formation energies and their effect on lattice thermal conductivity, respectively. Current advances in thermoelectric Bi2Te3 and CoSb3 based nanomaterials are summarized. Advanced synthesis and characterization methods and theoretical modeling were combined to assess and reduce ZT-limiting mechanisms in these materials. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssa.201532614Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. A, Applications and Materials Science
- Journal Volume
- 213
- Journal Issue
- 3
- Series
- Special issue: Nanostructured thermoelectrics
- Journal Page Range
- p. 739-749
- ISSN
- 1862-6300
- CODEN
- PSSABA
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 47065513
- Subject category
- S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ANTIMONIDES; BISMUTH SELENIDES; BISMUTH TELLURIDES; CHEMICAL COMPOSITION; COBALT COMPOUNDS; DENSITY FUNCTIONAL METHOD; ELECTRIC CONDUCTIVITY; MOESSBAUER EFFECT; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS METHOD; NANOSTRUCTURES; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; SILICON CARBIDES; SUBSTRATES; THERMAL CONDUCTIVITY; THERMOELECTRIC MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; VIBRATIONAL STATES; X-RAY DIFFRACTION
- Descriptors DEC
- ANTIMONY COMPOUNDS; BISMUTH COMPOUNDS; CALCULATION METHODS; CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; ELECTRICAL PROPERTIES; ELECTRON MICROSCOPY; ENERGY LEVELS; EPITAXY; EXCITED STATES; MATERIALS; MICROSCOPY; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS; VARIATIONAL METHODS