Published July 11, 2005 | Version v1
Journal article

Characterization of highly (110)- and (111)-oriented Pb(Zr,Ti)O3 films on BaPbO3 electrode using Ru conducting barrier

  • 1. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan (China)

Description

Highly non-(001)-oriented Pb(Zr,Ti)O3 (PZT) films have been fabricated by rf-magnetron sputtering. The preferential (110)-oriented BaPbO3 (BPO) deposited on Ru buffer layer induces the growth of (110)-oriented PZT film. With the aid of self-organized growth of PZT, the orientation of the film deposited on random-oriented BPO/Pt(111)/Ru(002) is (111)-preferred. The insertion of Pt layer between BPO and Ru changes the orientation of PZT from (110) to (111) and prevents the oxygen diffusion. These non-(001)-oriented PZT films possess more superior ferroelectric, fatigue, and retention properties than those of (001)-oriented PZT films

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
87
Journal Issue
2
Journal Page Range
p. 022906-022906.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2005 American Institute of Physics