Advances in Hg implanted Hgsub(1-x)Cdsub(x)Te photovoltaic detectors

Some recent results on Hg+ implanted Hgsub(1-x)Cdsub(x)Te photovoltaic detectors are reported. At 770K, peak detectivities equal to 2.8 x 1011, 5.9 x 1010 and 4 x 1010 cm Hzsup(1/2) W-1 with quantum efficiencies exceeding 90% were measured for selected diodes respectively at 3.7, 8 and 10.1 μm in reduced background conditions (i.e. FOV = 600). Zero bias resistance-area products as high as 104 Ω x cm2 at 5 μm and 24 Ω x cm2 at 9.5 μm were observed for 1.2 x 10-3 cm2 detectors. The capacitance-voltage measurements indicate an abrupt junction; at strong reverse bias an anomalous effect appears. The response time of diodes with 3 x 10-4 cm2 area is 1 nsec. (author)