Published June 3, 1975
| Version v1
Patent
Open
Radiation sensitive solid state devices
Creators
Description
A solid state radiation sensitive device is described employing JFETs as the sensitive elements. Two terminal construction is achieved by using a common conductor to capacitively couple to the JFET gate and to one of the source and drain connections. (auth)
Availability note (English)
MF available from INIS under the Report Number.Files
7234075.pdf
Files
(960.8 kB)
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Additional details
Additional titles
- Augmented title (English)
- Patent; JFET structures which may be fabricated in an array and act as an image intensifier
Publishing Information
- Imprint Pagination
- 20 p.
- IPC:
- Int. Cl.H01l17/00.
- IPC
- Int. Cl.H01l17/00.
- Patent number
- US patent document 3,887,936
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 7234075
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- FIELD EFFECT TRANSISTORS; IMAGE INTENSIFIERS; JUNCTION TRANSISTORS; RADIATION DETECTORS; SPECIFICATIONS
- Descriptors DEC
- MEASURING INSTRUMENTS; SEMICONDUCTOR DEVICES; TRANSISTORS