Published September 2014 | Version v1
Journal article

Colossal resistance switching in Pt/BiFeO3/Nb:SrTiO3 memristor

  • 1. Sun Yat-Sen University, State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Guangzhou (China)

Description

We report reversible resistance switching behaviors in Pt/BiFeO3/Nb:SrTiO3 memristor. The resistance of the junctions can be tuned up to about five orders of magnitude by applying voltage pulses at room temperature, which exhibits excellent retention and anti-fatigue characteristics. The high performances are promising for employing ferroelectric junctions in nonvolatile memory and logic devices. The nonvolatile resistance switching behaviors could be attributed to the formation and annihilation of trap centers in the BFO films, resulting in Poole-Frenkel emission for low resistance state and the thermionic emission for high resistance state, respectively. (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1007/s00339-014-8314-6

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing
Journal Volume
116
Journal Issue
4
Journal Page Range
p. 1741-1745
ISSN
0947-8396
CODEN
APAMFC