Enhancement of sub-terahertz detection by drain-to-source biasing on strained silicon MODFET devices

We report on non resonant detection of sub-terahertz radiation (148-353 GHz) using strained silicon modulation field effect transistor with different gate lengths. The devices were excited at room temperature by a Backward Wave Oscillator (BWO) source. Enhancement of the photoresponse signal by drain-to-source bias was observed. Increasing drain-to-source voltage leads to asymmetry between the boundary conditions at the source and drain contacts. (paper)