Enhanced room-temperature microwave dielectric properties in bismuth zinc niobate thin films

Synthesis temperature is always playing a crucial role on the determination of dielectric properties of materials. In this letter, (Bi_1.5Zn_0.5)(Zn_0.5Nb_1.5)O₇ (BZN) thin film was deposited onto quartz glass substrate by RF magnetron sputtering at room temperature and then post-annealed using rapid thermal processing. Film has been characterized with respect to crystalline phase and surface morphology, by means of X-ray diffraction and atomic force microscopy, suggesting no crystalline structure exists in annealed BZN film after post-annealing. Microwave dielectric properties were measured by split post dielectric resonator technique. After annealing at 150 °C, film showed excellent dielectric permittivity and low loss in microwave frequency range. This result indicates that the annealed BZN thin film has a great potential to be alternative of microwave materials fabricated at low temperature.