Published November 30, 2008 | Version v1
Journal article

Proton radiation effects in quantum dot lasers

  • 1. Department of Space Communication Engineering, Fukui University of Technology, 3-6-1 Gakuen, Fukui 910-8505 (Japan)
  • 2. The Wakasawan Energy Research Center, 64-52-1 Nagatani, Tsuruga, Fukui 914-0135 (Japan)
  • 3. Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

Description

Proton beams with energies of 10 and 200 MeV were irradiated onto InAs quantum dot lasers with a wavelength of 1.3 μm. The increase in threshold current by proton irradiation was small compared with those of the previously reported other quantum dot lasers with larger active region and 1.3-μm InGaAsP quantum well lasers. These results were discussed by taking account of non-ionizing energy loss and effective volume of active region

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2008.07.037

Additional details

Identifiers

DOI
10.1016/j.apsusc.2008.07.037;
PII
S0169-4332(08)01589-4;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
255
Journal Issue
3
Journal Page Range
p. 676-678
ISSN
0169-4332
CODEN
ASUSEE

Conference

Title
11. international conference on the formation of semiconductor interfaces
Acronym
ICFSI-11
Dates
19-24 Aug 2007
Place
Manaus (Brazil)

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.