Published April 6, 2015
| Version v1
Journal article
Gate-tunable high mobility remote-doped InSb/In1−xAlxSb quantum well heterostructures
Creators
- 1. HRL Laboratories, 3011 Malibu Canyon Rd, Malibu, California 90265 (United States)
- 2. Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)
- 3. Department of Physics and Astronomy, Purdue University, 525 Northwestern Ave., West Lafayette, Indiana 47907 (United States)
- 4. Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft (Netherlands)
- 5. Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark)
Description
Gate-tunable high-mobility InSb/In1−xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200 000 cm2/V s is measured at T = 1.8 K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 Ω·mm is achieved at 1.8 K
Additional details
Identifiers
- DOI
- 10.1063/1.4917027;
- arXiv
- arXiv:1503.06710v1;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 106
- Journal Issue
- 14
- Journal Page Range
- p. 142103-142103.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46104543
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ALUMINIUM COMPOUNDS; CARRIER MOBILITY; CONCENTRATION RATIO; DIELECTRIC MATERIALS; DOPED MATERIALS; ELECTRON DENSITY; ELECTRON GAS; GALLIUM ARSENIDES; HAFNIUM OXIDES; HALL EFFECT; HETEROJUNCTIONS; HYSTERESIS; INDIUM ANTIMONIDES; OPACITY; QUANTUM WELLS; SUBSTRATES; TEMPERATURE DEPENDENCE; TWO-DIMENSIONAL SYSTEMS
- Descriptors DEC
- ANTIMONIDES; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DIMENSIONLESS NUMBERS; GALLIUM COMPOUNDS; HAFNIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; MOBILITY; NANOSTRUCTURES; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC