Electron traps in n-GaAs irradiated with high electron beam fluxes at high temperatures

Deep-level transient spectra (DLTS) of vapour-phase epitaxy grown n-GaAs in the form of Schottky diodes with Ti barrier have been investigated after pulsed electron irradiation (j 2.3 x 10-4 to 1.3 x 10-3 A/cm2, and E = 1.0 to 2.2 MeV) at 400 0C and 50 0C (with subsequent post-irradiation annealing up to 400 0C). The concentration ratio changes of E traps with irradiating energy and electron beam density obtained following electron bombardment at 50 0C are explained. Postirradiation annealing up to 400 0C eliminates E traps and reveals additional P traps. Comparison with DLTS curves of n-GaAs irradiated at 400 0C demonstrate that defects can be introduced in epitaxial n-GaAs by electron irradiation at high temperature