Anomalous dependence of Si reflectivity on the dose of Ar+ ion implantation at T > 330 K

Experiment in-situ-measurement of the intensity of He-Ne-laser light (λ = 632.8 nm) reflected by Si implanted (100) surface is carried out to determine temperature dependence of defect formation kinetics and amorphism. Implantation is conducted using Ar+ ions with E = 90 keV, ion current density equals to j = 0.5 and 1.5 mkA/cm2. Specimen temperature varies from 298 up to 400 K. Ion beam direction under 9 deg angle to specimen normal eliminates channeling. Oxide layer is removed from specimens before implantation