Enhanced thermal conductivity of MoS2/InSe-nanoparticles/MoS2 hybrid sandwich structure

MoS₂ based hybrid structures have much attention due to their novel structures and potential applications in diverse areas, such as solar energy conversion, thermoelectric power generation and photo-transistors. In the present work, we have fabricated a novel sandwich structure of MoS₂/InSe-nanoparticles (NPs)/MoS₂ layers on SiO₂/Si substrate by a combination of chemical vapor deposition and physical vapor deposition methods. The morphology of these structures was also studied using scanning electron microscopy. In addition, we have also explored the thermal properties of these hybrid sandwich structures using temperature and power-dependent Raman spectroscopy. For MoS₂/InSe-NPs/MoS₂ sample, the first-order temperature coefficients of E¹_2g and A_1g modes were found to be −0.01722 and −0.01575 cm⁻¹/K, respectively, which are significantly large compared to MoS₂ layers without InSe-NPs (i.e. MoS₂/MoS₂ sample). Further, the thermal conductivity of MoS₂/InSe-NPs/MoS₂ and MoS₂/MoS₂ samples on SiO₂/Si substrate was extracted as ∼102.3 and ∼81.7 W/m-K, respectively. This work suggests an effective way to form a novel 2D-MoS₂ based sandwich structure with semiconductor/metal-NPs; opening up a new scenario to understand the electronic structure of the hybrid structure, and the local strain introduced by NPs. Electron-phonon interactions at an interface can have significant effects on electrical/thermal transport through the optoelectronic devices.