Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
- 1. Department of Chemical Engineering, Kyung Hee University, Yongin, Gyeonggi-do 446-701 (Korea, Republic of)
- 2. Regional Innovation Center—Components and Materials for Information Display, Kyung Hee University, Yongin, Gyeonggi-do 446-701 (Korea, Republic of)
Description
Aluminum oxide (AlxOy) layers were deposited on polyethylene naphthalate substrates by low frequency plasma-enhanced atomic layer deposition process for barrier property enhancement. Trimethylaluminum and oxygen plasma were used as precursor and reactant materials, respectively. In order to enhance the barrier properties several process parameters were examined such as plasma power, working pressure and electrode–substrate distance. Increase of plasma power enhanced the reactivity of activated atomic and molecular oxygen to reduce the carbon contents in AlxOy layer, which appeared to enhance the barrier properties. But too high power caused generation of byproducts which were reincorporated in AlxOy layer to reduce the barrier properties. Plasma generated at lower working pressure was provided with an additional energy for reactions and had more diffusion of the plasma. The O/Al ratio of the layer approached the stoichiometric value by increasing the electrode–substrate distance. At the following conditions: 300 W of plasma power, 26.7 Pa of working pressure and 50 mm of electrode–substrate distance, water vapor transmission rates of the AlxOy layer reached 8.85 × 10−4 g/m2 day. - Highlights: • Aluminum oxide layer was well formed by plasma enhanced atomic layer deposition. • Process parameters were optimized to enhance the barrier properties. • Barrier coating of plastic substrate can be applied to flexible display devices
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2013.02.125Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2013.02.125;
- PII
- S0040-6090(13)00395-7;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 534
- Journal Page Range
- p. 515-519
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47008140
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM OXIDES; DEPOSITS; DISPLAY DEVICES; ELECTRODES; OXYGEN; POLYETHYLENES; SUBSTRATES; WATER VAPOR
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; COMPUTER OUTPUT DEVICES; COMPUTER-GRAPHICS DEVICES; ELEMENTS; FLUIDS; GASES; NONMETALS; ORGANIC COMPOUNDS; ORGANIC POLYMERS; OXIDES; OXYGEN COMPOUNDS; POLYMERS; POLYOLEFINS; VAPORS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.