Published May 1990 | Version v1
Journal article Metadata-only

Preparation and study of electrical properties of gallium monotelluride crystals

Creators

  • 1. Erevanskij Gosudarstvennyj Univ., Erevan (USSR)

Description

Lamellar crystals of p-type conductivity gallium monotelluride are grown by Bridgeman method. Temperature dependences of electric conductivity, concentration and mobility of charge carriers are investigated. Main mechnisms which limit mobility of carriers within 77-400 K temperature range are determined. Ionization energies of acceptor levels, as well as individual concentrations of acceptors and donors which compensate them are determined

Additional details

Additional titles

Original title (Russian)
Получение и исследование электрофизических свойств кристаллов монотеллурида галлия

Publishing Information

Journal Title
Neorganicheskie Materialy
Journal Volume
26
Journal Issue
5
Series
Neorg. Mater.
Journal Page Range
949-951
CODEN
NEOMB

INIS

Country of Publication
USSR
Country of Input or Organization
USSR
INIS RN
22042243
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CARRIER DENSITY; CARRIER MOBILITY; CHARGE CARRIERS; CRYSTAL GROWTH; ELECTRIC CONDUCTIVITY; GALLIUM TELLURIDES; LAYERS; LOW TEMPERATURE; MEDIUM TEMPERATURE; P-TYPE CONDUCTORS; TEMPERATURE DEPENDENCE
Descriptors DEC
CHALCOGENIDES; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; MATERIALS; MOBILITY; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS