Published November 1, 2019
| Version v1
Journal article
Spontaneous and stimulated emission in InAs-based LED heterostructures
Creators
- 1. ITMO University, Saint-Petersburg 197101 (Russian Federation)
- 2. Ioffe Institute, Saint-Petersburg 194021 (Russian Federation)
- 3. Microsensor Technology, LLC, Saint-Petersburg 194223 (Russian Federation)
Description
Electroluminescence of 'flip-chip' LED heterostructures containing active layers made of InAs and barrier layers made of InAsSb(Ga,P) was studied experimentally and modelled. At the room temperature, spontaneous emission attributed to band-to-band recombination was observed. The shape of the EL band was strongly affected by absorption in the substrate. At low temperatures (T=4.2 and 77 K), stimulated emission was observed. Factors affecting the appearance and quenching of stimulated emission are discussed. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/1400/6/066044Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 1400
- Journal Issue
- 6
- Journal Page Range
- [4 p.]
- ISSN
- 1742-6596
Conference
- Title
- International Conference PhysicA.SPb/2019
- Dates
- 22-24 Oct 2019
- Place
- Saint Petersburg (Russian Federation)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53072776
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S74: ATOMIC AND MOLECULAR PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION; ELECTROLUMINESCENCE; INDIUM ARSENIDES; LAYERS; RECOMBINATION; SHAPE; STIMULATED EMISSION; SUBSTRATES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; EMISSION; ENERGY-LEVEL TRANSITIONS; INDIUM COMPOUNDS; LUMINESCENCE; PHOTON EMISSION; PNICTIDES; SORPTION