Published March 1997
| Version v1
Journal article
Improvement of the dielectric properties of Ta2O5 through substitution with Al2O3
Creators
- 1. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
Description
For bulk ceramic materials, small substitutions of Al2O3 in Ta2O5 are shown to cause a moderate enhancement of the dielectric constant. For compositions near 0.95Ta2O5 endash 0.05Al2O3, the temperature coefficient of the dielectric constant at 20 degree C dramatically decreases, from more than 200 ppm/degree C for pure Ta2O5 to less than 20 ppm/degree C. The quality factors (Q) at 1 MHz, are 2000 endash 5000. Measurements to 14 GHz at 20 degree C show that the dielectric constant is maintained to microwave frequencies, with a Q of ∼600 at 5 GHz. copyright 1997 American Institute of Physics
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 70
- Journal Issue
- 11
- Journal Page Range
- p. 1396-1398.
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 28072437
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM OXIDES; CERAMICS; DIELECTRIC PROPERTIES; FREQUENCY DEPENDENCE; GHZ RANGE; MHZ RANGE; QUALITY FACTOR; TANTALUM OXIDES
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; ELECTRICAL PROPERTIES; FREQUENCY RANGE; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS