Influence of CdSe layer air-baking on physical properties of CdSe-As2Se3 heterostructures

An investigation is made of the influence of the air-baking time on the physical properties of a CdSe layer, which is a part of the heterogeneous structure CdSe-As2Se3 used as a camera tube target. The I-U characteristics, C-U characteristics, the dependence of both the real and imaginary part admittance on frequency, and the photoconductance characteristics are measured. All measurements are carried out on heterostructures prepared with variable air-baking time of the CdSe layer: t =0, 5, 15, 40, and 120 min. The results of measurements contribute to the finding of the optimal production procedure with a minimum baking time of tsub(min) = 15 min. The heterostructures exhibit satisfactory properties. The dark current Isub(d)(U =1 V, T = 300 K) = 10-10 Acm-2 with a rectification factor g(U = 10 V) = 106 and a capacitance C (2 kHz) = 2900 pFcm-2. (author)