Damage coefficient in high-temperature particle- and γ-irradiated silicon p-i-n diodes

The impact of high-temperature neutron, electron, and γ-irradiations on the dark current of silicon p-i-n junctions is described in terms of a damage coefficient KI. It is shown that this KI is thermally activated and reduces for increasing irradiation temperature. The same activation energy is retrieved when studying the isochronal annealing behavior of a set of room-temperature irradiated diodes. This leads to a simple method to predict the high-temperature KI from only room-temperature irradiations combined with a thermal annealing study