Published July 1987
| Version v1
Journal article
Study of photoeffect in scandium doped silicon
Creators
- 1. AN SSSR, Tashkent. Otdel Teplofiziki
Description
Photocapacity and photoconductivity of silicon with scandium impurity are investigated. It is shown, that Sc in Si creates deep levels E1=Ec-(0.15-0.20), E2=Ec-0.27, E3=Ec-0.35, E4=Ec-(0.50-0.55), E5=Ev+0.45 eV. Spectral dependences of electron photoionization cross sections xn for E2 and E4 levels are determined; it is revealed, that xp>xn relation is typical of the given levels. Peculiarities of n-Si photoconductivity under combined lighting are considered
Additional details
Additional titles
- Original title (Russian)
- Исследование фотоэффектов в кремнии, легированном скандием
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 21
- Journal Issue
- 7
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1198-1202
- ISSN
- 0015-3222
- CODEN
- FTPPA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 19020021
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ACTIVATION ENERGY; CAPACITY; INFRARED SPECTRA; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHOTOCONDUCTIVITY; PHOTOIONIZATION; SCANDIUM ADDITIONS; SILICON
- Descriptors DEC
- ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY; IONIZATION; MATERIALS; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SEMIMETALS; SPECTRA