Published September 22, 2008
| Version v1
Journal article
The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process
Creators
- 1. Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
- 2. Department of Chemistry, Hanyang University, Seoul 133-791 (Korea, Republic of)
Description
The plasma enhanced atomic layer deposition process for the HfO2 thin film is modeled as simple reactions between Hf(OH)3NH2 and reactive oxygen species. The density functional theory calculation was performed for plausible reaction pathways to construct the reaction profile. While the triplet molecular oxygen is unlikely to form a reactive complex, the singlet molecular oxygen forms the stable adduct that goes through the transition state and completes the reaction pathway to the products. Either two singlet or two triplet oxygen atoms make the singlet adduct complex, which follows the same pathway to the product as the singlet molecular oxygen reacts
Additional details
Identifiers
- DOI
- 10.1063/1.2991288;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 93
- Journal Issue
- 12
- Journal Page Range
- p. 124104-124104.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40050996
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- DENSITY FUNCTIONAL METHOD; DEPOSITION; HAFNIUM OXIDES; LAYERS; OXYGEN; PLASMA; PULSES; THIN FILMS; TRIPLETS
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; ELEMENTS; FILMS; HAFNIUM COMPOUNDS; MULTIPLETS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VARIATIONAL METHODS
Optional Information
- Notes
- (c) 2008 American Institute of Physics