Catalytic CVD processes of oxidizing species and the prevention of oxidization of heated tungsten filaments by H2
Creators
- 1. Faculty of Engineering, Shizuoka University, Johoku, Naka, Hamamatsu, Shizuoka 432-8561 (Japan)
- 2. School of Materials Science, Japan Advanced Institute of Science and Technology, Asahidai, Nomi, Ishikawa 923-1292 (Japan)
Description
The catalytic decomposition conditions of O2, N2O and NO were investigated to avoid oxidization of heated tungsten filaments. It was confirmed that no oxidization takes place in the presence of an excess amount of H2 or NH3: for example, when the catalyzer temperature is 1990 K and the H2/O2 flow rate ratio is more than 18. These results are consistent with the recent results that no oxidization is observed in the SiH4/NH3/H2/O2/He system to deposit SiOxNy films as long as the O2 flow rate is low. In addition, it was revealed that in this SiH4/NH3/H2/O2/He system, O2 is not only decomposed on the catalyzer surfaces but also is consumed in homogeneous and/or heterogeneous reactions. One of the consumption paths in the gas phase should be the reaction with SiH3 to produce SiO
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2007.06.041Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2007.06.041;
- PII
- S0040-6090(07)00980-7;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 516
- Journal Issue
- 5
- Journal Page Range
- p. 829-831
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 4. international conference on hot-wire CVD Cat-CVD process
- Dates
- 3-8 Oct 2006
- Place
- Takayama, Gifu (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39071331
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMMONIA; CHEMICAL VAPOR DEPOSITION; DECOMPOSITION; DEPOSITS; FILAMENTS; FILMS; FLOW RATE; HYDROGEN; NITRIC OXIDE; NITROUS OXIDE; OXYGEN; SILANES; SILICON OXIDES; SURFACES; TUNGSTEN; WIRES
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; CHEMICAL REACTIONS; DEPOSITION; ELEMENTS; HYDRIDES; HYDROGEN COMPOUNDS; METALS; NITROGEN COMPOUNDS; NITROGEN HYDRIDES; NITROGEN OXIDES; NONMETALS; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METALS; SILICON COMPOUNDS; SURFACE COATING; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.