Solubility of the native deep-level defect typical of LPE-grown AlGaAs

The hole traps are typical of LPE-grown AlGaAs and due to a native defect. By investigating the trap concentration in dependence on the concentration of various dopants it is shown that the formation of the underlying defect is determined by the type of conductivity, by the amount of the dopant as well as by the lattice site occupied by the doping atom. It is, for the first time, demonstrated that the model of dopant-induced solubility can be applied in order to establish the charge character, the lattice site, and the 'freezing-in' temperature of a deep-level defect in a semiconductor. (author) 22 refs., 5 figs