Published January 2014 | Version v1
Journal article Metadata-only

Effect of post-growth anneal on the photoluminescence properties of GaSbBi

Creators

  • 1. Department of Electronic Science, University of Calcutta, 92, A. P. C. Road, Kolkata-700009 (India)

Description

The effect of post-growth anneal on the photoluminescence (PL) properties of GaSbBi layers, grown by liquid phase epitaxy, is investigated. It is observed that annealing for temperatures up to 650 °C increases the PL intensity and decreases the PL peak width indicating an improvement in the crystalline quality of the layer. A second peak at 0.72 eV, observed in GaSbBi only, is totally removed by annealing, suggesting that the peak is related to emission from Bi-related antisite defects. A red shift of up to 9 meV is also observed for the band edge emission peak as a result of anneal. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/29/1/015003

Additional details

Identifiers

DOI
10.1088/0268-1242/29/1/015003;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
29
Journal Issue
1
Journal Page Range
[3 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46082381
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; BISMUTH COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL GROWTH; EV RANGE; GALLIUM ANTIMONIDES; LAYERS; LIQUID PHASE EPITAXY; PHOTOLUMINESCENCE; RED SHIFT
Descriptors DEC
ANTIMONIDES; ANTIMONY COMPOUNDS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; EMISSION; ENERGY RANGE; EPITAXY; GALLIUM COMPOUNDS; HEAT TREATMENTS; LUMINESCENCE; PHOTON EMISSION; PNICTIDES