Published 1987 | Version v1
Miscellaneous Metadata-only

GaInxAs/GaInyAs heterostructure growth by the MOVPE techniques at low pressure

Creators

  • 1. TELEBRAS, Campinas (Brazil). Centro de Pesquisas

Description

Published in summary form only

Additional details

Additional titles

Original title (Portuguese)
Crescimento de heteroestruturas de GaIn

Publishing Information

Imprint Title
Proceedings of the 10. National Meeting on Condensed Matter Physics
Imprint Pagination
192 p.
Journal Page Range
p. 36.
Report number
INIS-BR--1164

Conference

Title
10. National Meeting on Condensed Matter Physics.
Dates
5-8 May 1987.
Place
Caxambu, MG (Brazil).

INIS

Country of Publication
Brazil
Country of Input or Organization
Brazil
INIS RN
19069994
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
CRYSTAL GROWTH; EPITAXY; GALLIUM ARSENIDES; INDIUM ADDITIONS; LOW PRESSURE; PHOTOLUMINESCENCE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; EMISSION; GALLIUM COMPOUNDS; LUMINESCENCE; PHOTON EMISSION

Optional Information

Notes
Imprint:Anais do 10. Encontro Nacional de Fisica da Materia Condensada.