Published February 2019 | Version v1
Journal article

Synthesis of Oxygen-Doped Graphitic Carbon Nitride from Thiourea

  • 1. Belarusian State University of Informatics and Radioelectronics (Belarus)

Description

We have synthesized oxygen-doped graphite-like carbon nitride (g-C3N4) by the thermal treatment of the thiourea at 450–550°C. With an increase in the annealing temperature, the oxygen concentration in g-C3N4 increases, and the band-gap of the material decreases from 2.64 to 2.47 eV. The semiconductor properties of g-C3N4 doped with oxygen are confirmed by its high photocatalytic activity, determined by decoloration of a Rhodamine B aqueous solution in the presence of g-C3N4 upon irradiation with visible light.

Additional details

Identifiers

Publishing Information

Journal Title
Technical Physics Letters
Journal Volume
45
Journal Issue
2
Journal Page Range
p. 108-110
ISSN
1063-7850

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Copyright
Copyright (c) 2019 Pleiades Publishing, Ltd.