The conductivity of glass-like semiconductors As-S-Te in the alternating current region

Electric properties of the As-S-Te glass-like semiconductor in an alternating electric field were studied to found out the conductivity mechanism. The samples of the AsX4 and AsX9 region at the [Te]/[S+Te] = 0.1; 0.2; 0.3; 0.4; 0.5 ratio were used in the experiment. The experiments were carried out in vacuum in the 77-330 K range. It is shown that the σ conductivity changes according to the σ (ν) approximately νsup(n) power law when n approximately 0.8 in the ν approximately 4x104 - 106 Hz range, and n approximately 1.5-2.0 in the ν > 4x106 Hz range; σ weakly depends on both temperature and the sample composition; under equal external conditions the sample conductivity at alternating current is considerably greater than at direct one. Suppositions about the conductivity mechanism and the structure of energy bands in the As-S-Te glass-like systems are presented. The preference is given to the jumping character of conductiVity in the frequency range where the σ approximately νsup(0.8) type dependence is true