Mechanisms of radiative recombination in nucleus-doped gallium arsenide

Photoluminescence (PL) of monocrystals and epitaxial layers of gallium arsenide doped by nuclear reaction method under irradiation with thermal neutrons is investigated. PL spectrum analysis during annealing of weakly doped materials (n<1x1017cm-3) has shown that the recombintion is conditioned by interzonal and interimpurity transitions with the prticipation of residual carbon acceptors and germanium acceptors produced under nuclear transmutations. PL edge band displacement in the high-energy direction is observed in strongly doped materials (n>5x1017cm-3) during annealing which is connected with transitions to a rearranged band of acceptor states. It is ascertained that a part of germanium atoms, produced under nuclear transmutations, replaces arsenid atoms and manifests acceptor properties. Residual technologic carbon acceptors are capable of interaction with radiation defects