Published November 3, 2020
| Version v1
Journal article
Growth and characterization of InP-based 1750 nm emitting membrane external-cavity surface-emitting laser
Creators
- 1. Institute of Microelectronics and Photonics. Łukasiewicz Research Network (Poland)
- 2. Warsaw University of Life Sciences, SGGW. Institute of Information Technology (Poland)
Description
The epitaxial growth and emission properties of a membrane external-cavity surface-emitting laser (MECSEL) are demonstrated in the 1750 nm band. A heterostructure consisting of InGaAs quantum wells enclosed by InGaAlAs barriers was deposited on InP by molecular beam epitaxy. The emitted power exceeded 1.5 W, which is the highest that has been reported in this spectral range to date.
Additional details
Identifiers
Publishing Information
- Journal Title
- Applied Physics. B, Lasers and Optics
- Journal Volume
- 126
- Journal Issue
- 12
- Journal Page Range
- vp.
- ISSN
- 0946-2171
- CODEN
- APBOEM
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55058138
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL GROWTH; DEPOSITS; DIFFUSION BARRIERS; EMISSION; EPITAXY; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LASER CAVITIES; LIGHT EMITTING DIODES; MEMBRANES; MOLECULAR BEAM EPITAXY; QUANTUM WELLS; SURFACE PROPERTIES; SURFACES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS
Optional Information
- Copyright
- Copyright (c) 2020 © The Author(s) 2020