Published August 1985
| Version v1
Journal article
Simulations of design parameters for SR lithography system
- 1. Electrotechnical Lab., Sakura, Ibaraki (Japan)
Description
For the optimization of the SR lithography system using the ETL-TERAS storage ring, computer simulations were performed with various design parameters such as supporting membranes and absorbers of masks, ambient gases and mask-wafer proximity gap. It was found that 0.2 μm line/space patterns could be replicated to PMMA resist with a proximity gap of up to 50 μm in an optimized system and the temperature rise of the mask during the exposure could be kept less than 0.3 0C by using helium gas as an exposing ambient. (author)
Additional details
Publishing Information
- Journal Title
- Denshi Gijutsu Sogo Kenkyusho Iho
- Journal Volume
- 49
- Journal Issue
- 8
- Series
- Denshi Gijutsu Sogo Kenkyusho Iho.
- Journal Page Range
- 613-630
- ISSN
- 0366-9092
- CODEN
- DESIA
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 17047417
- Subject category
- S43: PARTICLE ACCELERATORS;
- Descriptors DEI
- FREQUENCY DEPENDENCE; MATERIALS WORKING; OPTIMIZATION; PMMA; SIMULATION; SPATIAL RESOLUTION; SPECTRAL DENSITY; STORAGE RINGS; SYNCHROTRON RADIATION
- Descriptors DEC
- BREMSSTRAHLUNG; ELECTROMAGNETIC RADIATION; ESTERS; FABRICATION; FUNCTIONS; ORGANIC COMPOUNDS; ORGANIC POLYMERS; POLYACRYLATES; POLYMERS; POLYVINYLS; RADIATIONS; RESOLUTION; SPECTRAL FUNCTIONS