Published July 1, 2002 | Version v1
Journal article Metadata-only

Effect of the nano-oxide layer as a Mn diffusion barrier in specular spin valves

Creators

  • 1. Nano Device Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong Seungbuk-gu, Seoul 136-791 (Korea, Republic of)
  • 2. School of Materials Science and Engineering, Seoul National University, San 56-1 Shilim-dong Kwanak-gu, Seoul 151-742 (Korea, Republic of)

Description

In previous work an enhanced giant magnetoresistance (GMR) effect in spin valves (SVs) with a nano-oxide layer (NOL) after annealing at about 250-300 deg. C has been reported. We have shown that SVs with a NOL also have higher thermal stability of the MR ratio at 300 deg. C. From secondary-ion-mass spectroscopy and x-ray photoelectron spectroscopy depth profile analysis, the mechanism of the improved thermal stability of the SVs with a NOL is shown to be related to MnO formation within the NOL. Thus, Mn atoms from the FeMn layer are trapped, and Mn diffusion is inhibited by the NOL during annealing

Additional details

Identifiers

DOI
10.1063/1.1491605;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
81
Journal Issue
1
Journal Page Range
p. 105-107
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35011254
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ANNEALING; DIFFUSION BARRIERS; IRON ALLOYS; MAGNETORESISTANCE; MANGANESE ALLOYS; MASS SPECTRA; NANOSTRUCTURES; SENSITIVITY; SPIN; THERMAL DEGRADATION; THIN FILMS; X-RAY PHOTOELECTRON SPECTROSCOPY
Descriptors DEC
ALLOYS; ANGULAR MOMENTUM; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELECTRON SPECTROSCOPY; FILMS; HEAT TREATMENTS; PARTICLE PROPERTIES; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; SPECTRA; SPECTROSCOPY; TRANSITION ELEMENT ALLOYS

Optional Information

Notes
(c) 2002 American Institute of Physics.